Research in electronics in based on new semiconductors offers challenges in several thrilling areas. We are now looking for a new team member to join us in our efforts in exploring ultimate limitations in materials and device concepts of transistors based on III-nitride semiconductors. In this work device characterization and modelling are important tools enabling better understanding and directions of optimization of device performance.
About us
The https://www.chalmers.se/en/departments/mc2/research/microwave-electronics/ at the https://www.chalmers.se/en/departments/mc2/ employs more than 40 people performing world-class research on high speed electronic devices, circuits, and systems for a wide range of communication and sensing applications in the frequency range from 1 GHz to 500 GHz. Our facilities include a uniquely well-equipped laboratory for advanced millimeter wave measurements and a state-of-the art cleanroom facility.
A major part our research is targeting new semiconductor materials and devices to enable higher capacity and improved energy efficiency in a wide range of future microwave and millimeter systems. In recent years, electronic devices and circuits based on wide bandgap semiconductors such as III-nitrides (GaN) have demonstrated disruptive performance in terms of frequency, power, and efficiency figure of merits. We will now investigate advanced device concepts to further harvest the potential of III-nitride devices and circuits. Our research in GaN HEMT technology target application within wireless communication and radar systems.
About the research project
This PhD student position will focus on research on III-nitride devices and circuits for high frequency applications. We are exploring new concepts in III-nitride semiconductor material and device processing to optimize important properties, such as high frequency operation, output power, linearity, and efficiency. The goal is to push the limits of III-nitride semiconductor devices. New epitaxial designs are grown in-house or by our collaborative partners. A specific type of transistors, high electron mobility transistors, HEMTs, are fabricated, characterized and evaluated at Chalmers. In this endeavor, the device characterization and modelling are key tools, which offer many challenges. Specifically, the characterization and modelling of non-linear characteristics (e.g. large-signal and trapping effects) are important research areas.
Who we are looking for
The following requirements are mandatory:
The following experience will strengthen your application:
What you will do
You will be a member in a team of other PhD students and senior researchers, both from industry and academia, working with semiconductor technology development, characterization, modelling, circuit design, and realization of complete wireless system demonstrators. You will mainly perform research combined with some teaching and collaborative activities with partners. A PhD student position at Chalmers typically consists of 4 years of research and courses plus up to 1 year of departmental work (teaching, external projects etc.)
Contract terms
To read about our contract terms, please go to https://www.chalmers.se/en/about-chalmers/work-with-us/vacancies/?rmpage=job&rmjob=14797&rmlang=UK
What we offer
Find more general information about doctoral studies at Chalmers https://www.chalmers.se/en/research/we-train-new-researchers/about-doctoral-studies/.
Application procedure
To apply, please go to https://www.chalmers.se/en/about-chalmers/work-with-us/vacancies/?rmpage=job&rmjob=14797&rmlang=UK
We welcome your application no later than 2026-05-20
For questions, please contact:
Niklas Rorsman
Research Professor
mailto:[email protected]
We look forward to your application!